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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased

 

NSBC123JPDXV6T1 — TRANS BR NPN/PNP DUAL 50V SOT563

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Power - Max500mW
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSOT-563
Found under nameNSBC123JPDXV6OSCT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NSBC123JPDXV6T5GON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
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NSBC123JPDXV6T1GNSBC123JPDXV6T1GON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NSBA123JDXV6T5GON SemiconductorTRANS BRT PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,06Additional information
Find at suppliers
NSBC144EPDXV6T5GON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,06Additional information
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NSBC114YPDXV6T1ON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBC144EPDXV6T5ON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBC123JDXV6T1ON SemiconductorTRANS BRT NPN DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBA123JDXV6T1ON SemiconductorTRANS BRT PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBC123JDXV6T5ON SemiconductorTRANS BRT NPN DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBC144EPDXV6T1ON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBA123JDXV6T1GNSBA123JDXV6T1GON SemiconductorTRANS BRT PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10
from 0,42
Additional information
Find at suppliers
NSBC123JDXV6T1GON SemiconductorTRANS BRT NPN DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBC144EPDXV6T1GNSBC144EPDXV6T1GON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
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NSBC114YPDXV6T1GNSBC114YPDXV6T1GON SemiconductorTRANS BR NPN/PNP DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10
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NSBC123JDXV6T5GON SemiconductorTRANS BRT NPN DUAL 50V SOT563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
NSBC114YPDXV6T5GON SemiconductorTRANS BRT DUAL COMPL 50V SOT-563
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 500mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
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