Discrete Semiconductor Products · MOSFETs - Arrays

Manufacturer	Texas Instruments
Harmful substances	RoHS Lead-free

Rds On (Max) @ Id, Vgs	180 mOhm @ 1.5A, 10V
Drain to Source Voltage (Vdss)	15V
Gate Charge (Qg) @ Vgs	5.45nC @ 10V
Current - Continuous Drain (Id) @ 25° C	1.17A
FET Polarity	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Power - Max	840mW
Mounting Type	Surface Mount
Package / Case	8-SOIC (3.9mm Width)

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	TPS1120DR	Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 15V · Gate Charge (Qg) @ Vgs: 5.45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · FET Polarity: 2 P-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	from 1,12 from 2,45	Additional information Find at suppliers
	TPS1120DRG4	Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 15V · Gate Charge (Qg) @ Vgs: 5.45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · FET Polarity: 2 P-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	from 0,95	Additional information Find at suppliers
	TPS1120D	Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 15V · Gate Charge (Qg) @ Vgs: 5.45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · FET Polarity: 2 P-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	from 0,94 from 2,33	Additional information Find at suppliers

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