- Additional photo - Dimensional Drawing |
QS6K1TR — MOSFET 2N-CH 30V 1A TSMT6
Manufacturer | Rohm Semiconductor |
Harmful substances | RoHS Lead-free |
| Rds On (Max) @ Id, Vgs | 238 mOhm @ 1A, 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Gate Charge (Qg) @ Vgs | 2.4nC @ 4.5V |
Current - Continuous Drain (Id) @ 25° C | 1A |
Input Capacitance (Ciss) @ Vds | 77pF @ 10V |
FET Polarity | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Power - Max | 1.25W |
Mounting Type | Surface Mount |
Package / Case | TSMT6 |
Found under name | QS6K1DKR |
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