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NTZD3155CT1G

- Dimensional Drawing

NTZD3155CT1G — MOSFET N/P-CH 20V 430MA SOT-563

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs550 mOhm @ 540mA, 4.5V
Drain to Source Voltage (Vdss)20V
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C540mA, 430mA
Input Capacitance (Ciss) @ Vds150pF @ 16V
FET PolarityN and P-Channel
FET FeatureLogic Level Gate
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSOT-563
Found under nameNTZD3155CT1GOSCT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NTZD3155CT5GON SemiconductorMOSFET N/P-CH COMPL 20V SOT-563
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA, 430mA  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 16V  ·  FET Polarity: N and P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10Additional information
Find at suppliers
NTZD3155CT2GON SemiconductorMOSFET N/P-CH COMPL 20V SOT-563
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA, 430mA  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 16V  ·  FET Polarity: N and P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10Additional information
Find at suppliers

Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NTZD3156CT1GON SemiconductorMOSFET N/P-CH 20V SOT-563
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA, 430mA  ·  Input Capacitance (Ciss) @ Vds: 72pF @ 16V  ·  FET Polarity: N and P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10Additional information
Find at suppliers
NTZD3156CT2GON SemiconductorMOSFET N/P-CH 20V SOT-563
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA, 430mA  ·  Input Capacitance (Ciss) @ Vds: 72pF @ 16V  ·  FET Polarity: N and P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10Additional information
Find at suppliers
NTZD3156CT5GON SemiconductorMOSFET N/P-CH 20V SOT-563
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA, 430mA  ·  Input Capacitance (Ciss) @ Vds: 72pF @ 16V  ·  FET Polarity: N and P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,10Additional information
Find at suppliers

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