 - Dimensional Drawing |
IRF8915TRPBF — MOSFET 2N-CH 20V 8.9A 8-SOIC
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
 | IRF8915PBF | International Rectifier | MOSFET 2N-CH 20V 8.9A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.9A · Input Capacitance (Ciss) @ Vds: 540pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,31 | Additional information Find at suppliers |
| IRF8915TR | International Rectifier | MOSFET 2N-CH 20V 8.9A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.9A · Input Capacitance (Ciss) @ Vds: 540pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| IRF8915 | International Rectifier | MOSFET 2N-CH 20V 8.9A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.9A · Input Capacitance (Ciss) @ Vds: 540pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers |
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