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Discrete Semiconductor Products  ·  MOSFETs - Arrays

 
IRF7754

IRF7754 — MOSFET 2P-CH 12V 5.5A 8-TSSOP

ManufacturerInternational Rectifier
SeriesHEXFET®
Rds On (Max) @ Id, Vgs25 mOhm @ 5.4A, 4.5V
Drain to Source Voltage (Vdss)12V
Gate Charge (Qg) @ Vgs22nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C5.5A
Input Capacitance (Ciss) @ Vds1984pF @ 6V
FET Polarity2 P-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max1W
Mounting TypeSurface Mount
Package / Case8-TSSOP
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRF7754TRIRF7754TRInternational RectifierMOSFET 2P-CH 12V 5.5A 8-TSSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1984pF @ 6V  ·  FET Polarity: 2 P-Channel (Dual)  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
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IRF7754GTRPBFIRF7754GTRPBFInternational RectifierMOSFET P-CH DUAL 12V 5.5A 8TSSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1984pF @ 6V  ·  FET Polarity: 2 P-Channel (Dual)  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
from 0,93
from 2,21
Additional information
Find at suppliers
IRF7754TRPBFInternational RectifierMOSFET P-CH DUAL 12V 5.5A 8TSSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1984pF @ 6V  ·  FET Polarity: 2 P-Channel (Dual)  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
from 0,77Additional information
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