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APTM50DHM35G — MOSFET MOD ASYMMETRIC BRIDGE SP6

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs39 mOhm @ 49.5A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs280nC @ 10V
Current - Continuous Drain (Id) @ 25° C99A
Input Capacitance (Ciss) @ Vds14000pF @ 25V
FET Polarity2 N-Channel (Asymmetrical Bridge)
FET FeatureStandard
Power - Max781W
Mounting TypeChassis Mount
Package / CaseSP6
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APTM50HM35FGMicrosemi-PPGMOSFET MODULE FULL BRIDGE SP6
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 99A  ·  Input Capacitance (Ciss) @ Vds: 14000pF @ 25V  ·  FET Polarity: 4 N-Channel (H-Bridge)  ·  FET Feature: Standard  ·  Power - Max: 781W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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