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SI4632DY-T1-E3

- Dimensional Drawing

SI4632DY-T1-E3 — MOSFET N-CH 25V 40A 8-SOIC

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesWFET®
Rds On (Max) @ Id, Vgs2.7 mOhm @ 20A, 10V
Drain to Source Voltage (Vdss)25V
Gate Charge (Qg) @ Vgs161nC @ 10V
Current - Continuous Drain (Id) @ 25° C40A
Input Capacitance (Ciss) @ Vds11175pF @ 15V
FET PolarityN-Channel
FET FeatureStandard
Power - Max7.8W
Mounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)
Found under nameSI4632DY-T1-E3TR
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SI7138DP-T1-E3SI7138DP-T1-E3Vishay/SiliconixMOSFET N-CH 60V 30A PPAK 8SOIC
Series: WFET®  ·  Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 19.7A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 6900pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI4398DY-T1-E3SI4398DY-T1-E3Vishay/SiliconixMOSFET N-CH 20V 19A 8-SOIC
Series: WFET®  ·  Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 5620pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SIE830DF-T1-E3SIE830DF-T1-E3Vishay/SiliconixMOSFET N-CH 30V 50A 10-POLARPAK
Series: WFET®  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (S)
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SI4398DY-T1-GE3Vishay/SiliconixMOSFET N-CH 20V 19A 8-SOIC
Series: WFET®  ·  Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 5620pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI4472DY-T1-E3SI4472DY-T1-E3Vishay/SiliconixMOSFET N-CH 150V 7.7A 8-SOIC
Series: WFET®  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 1735pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7430DP-T1-E3SI7430DP-T1-E3Vishay/SiliconixMOSFET N-CH 150V 26A PPAK 8SOIC
Series: WFET®  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 1735pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 64W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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