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IRFPS37N50A — MOSFET N-CH 500V 36A SUPER247

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs130 mOhm @ 22A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs180nC @ 10V
Current - Continuous Drain (Id) @ 25° C36A
Input Capacitance (Ciss) @ Vds5579pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max446W
Mounting TypeThrough Hole
Package / CaseSuper-247
Found under name*IRFPS37N50A
Analogous by characteristics
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Drain to Source Voltage (Vdss): 30V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF540SPBFIRF540SPBFVishay/SiliconixMOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFL41N15DIRFL41N15DVishay/SiliconixMOSFET N-CH 150V 41A D2PAK
Drain to Source Voltage (Vdss): 150V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRC740IRC740Vishay/SiliconixMOSFET N-CH 400V 10A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRF740ASTRRPBFIRF740ASTRRPBFVishay/SiliconixMOSFET N-CH 400V 10A D2PAK
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1030pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SIA414DJ-T1-GE3SIA414DJ-T1-GE3Vishay/SiliconixMOSFET N-CH 8V 12A SC70-6
Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 4V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 19W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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SI3473DV-T1-E3SI3473DV-T1-E3Vishay/SiliconixMOSFET P-CH 12V 5.9A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IRFPF40PBFIRFPF40PBFVishay/SiliconixMOSFET N-CH 900V 4.7A TO-247AC
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.7A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRLD014IRLD014Vishay/SiliconixMOSFET N-CH 60V 1.7A 4-DIP
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRFS9N60ATRLIRFS9N60ATRLVishay/SiliconixMOSFET N-CH 600V 9.2A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7174DP-T1-GE3SI7174DP-T1-GE3Vishay/SiliconixMOSFET N-CH 75V 60A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 2770pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRFPC50APBFIRFPC50APBFVishay/SiliconixMOSFET N-CH 600V 11A TO-247AC
Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 2100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 180W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 2,82
from 6,90		Additional information
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IRFUC20Vishay/SiliconixMOSFET N-CH 600V 2A I-PAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 2,43Additional information
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IRF9Z24STRRIRF9Z24STRRVishay/SiliconixMOSFET P-CH 60V 11A D2PAK
Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,06
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SI4842BDY-T1-GE3SI4842BDY-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 28A 8-SOIC
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 3650pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 6.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,40
from 3,36		Additional information
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IRF840LCSTRRIRF840LCSTRRVishay/SiliconixMOSFET N-CH 500V 8A D2PAK
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,85Additional information
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IRF9620IRF9620Vishay/SiliconixMOSFET P-CH 200V 3.5A TO-220AB
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,43Additional information
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SI7431DP-T1-GE3Vishay/SiliconixMOSFET P-CH 200V 2.2A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 174 mOhm @ 3.8A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,88Additional information
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IRF644NSTRLPBFIRF644NSTRLPBFVishay/SiliconixMOSFET N-CH 250V 14A D2PAK
Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF730ALIRF730ALVishay/SiliconixMOSFET N-CH 400V 5.5A TO-262
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,09Additional information
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IRFP460NPBFIRFP460NPBFVishay/SiliconixMOSFET N-CH 500V 20A TO-247AC
Rds On (Max) @ Id, Vgs: 240 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 124nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFBE20LVishay/SiliconixMOSFET N-CH 800V 1.8A TO-262
Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,20Additional information
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IRF9Z30PBFIRF9Z30PBFVishay/SiliconixMOSFET P-CH 50V 18A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,14
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