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Discrete Semiconductor Products  ·  MOSFETs - Single

 
IRFIB7N50LPBF

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- Dimensional Drawing

IRFIB7N50LPBF — MOSFET N-CH 500V 6.8A TO220FP

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesHEXFET®
Rds On (Max) @ Id, Vgs380 mOhm @ 4.1A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs92nC @ 10V
Current - Continuous Drain (Id) @ 25° C6.8A
Input Capacitance (Ciss) @ Vds2220pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max46W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Found under name*IRFIB7N50LPBF
Analogous by characteristics
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IRFP354PBFIRFP354PBFVishay/SiliconixMOSFET N-CH 450V 14A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFIBC20GIRFIBC20GVishay/SiliconixMOSFET N-CH 600V 1.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC740IRC740Vishay/SiliconixMOSFET N-CH 400V 10A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFU4105ZTRVishay/SiliconixMOSFET N-CH 55V 30A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRC830IRC830Vishay/SiliconixMOSFET N-CH 500V 4.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 610pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRF9Z30PBFIRF9Z30PBFVishay/SiliconixMOSFET P-CH 50V 18A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFB9N30APBFIRFB9N30APBFVishay/SiliconixMOSFET N-CH 300V 9.3A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.3A  ·  Input Capacitance (Ciss) @ Vds: 920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFBA22N50AIRFBA22N50AVishay/SiliconixMOSFET N-CH 500V 24A SUPER-220
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 3400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 340W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-220™
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IRC540PBFIRC540PBFVishay/SiliconixMOSFET N-CH 100V 28A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFI710GIRFI710GVishay/SiliconixMOSFET N-CH 400V 1.6A TO220FP
Series: HEXFET®  ·  Drain to Source Voltage (Vdss): 400V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFS9N60ATRLIRFS9N60ATRLVishay/SiliconixMOSFET N-CH 600V 9.2A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF2807ZSTRLIRF2807ZSTRLVishay/SiliconixMOSFET N-CH 75V 75A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF7822TRRVishay/SiliconixMOSFET N-CH 30V 18A 8-SOIC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFPC30IRFPC30Vishay/SiliconixMOSFET N-CH 600V 4.3A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFBC20IRFBC20Vishay/SiliconixMOSFET N-CH 600V 2.2A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFI840GPBFIRFI840GPBFVishay/SiliconixMOSFET N-CH 500V 4.6A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRL2203SIRL2203SVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLR024TRRVishay/SiliconixMOSFET N-CH 60V 14A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRC634PBFIRC634PBFVishay/SiliconixMOSFET N-CH 250V 8.1A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFI3415IRFI3415Vishay/SiliconixMOSFET N-CH 150V 21A TO-220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 42 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFIB5N65AIRFIB5N65AVishay/SiliconixMOSFET N-CH 650V 5.1A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 1417pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFIB8N50KIRFIB8N50KVishay/SiliconixMOSFET N-CH 500V 6.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRF9Z30STRLIRF9Z30STRLVishay/SiliconixMOSFET P-CH 50V 18A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR010TRRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRC634IRC634Vishay/SiliconixMOSFET N-CH 250V 8.1A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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