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Discrete Semiconductor Products  ·  MOSFETs - Single
 

2SK2231 — MOSFET N-CH 60V 5A 2-7B1B

ManufacturerToshiba
Rds On (Max) @ Id, Vgs160 mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs12nC @ 10V
Current - Continuous Drain (Id) @ 25° C5A
Input Capacitance (Ciss) @ Vds370pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max20W
Mounting TypeThrough Hole
Package / Case2-7B1B
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2SK3371(TE16L1,NQ)ToshibaMOSFET N-CH 600V 1A SC-64
Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 190pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK4012(Q)ToshibaMOSFET N-CH 500V 13A SC-67
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK3497(F)ToshibaMOSFET N-CH 180V 10A SC-67
Drain to Source Voltage (Vdss): 180V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 130W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3667(Q)ToshibaMOSFET N-CH 600V 7.5A SC-67
Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SJ378(TP,Q)ToshibaMOSFET P-CH 60V 5A TPS
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole
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TPCP8005-H(TE85L,FToshibaMOSFET N-CH 30V 11A PS-8
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 840mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3V1K
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2SK3863(TE16L1,Q)ToshibaMOSFET N-CH 500V 5A SC-64
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount
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2SK2993(TE24L,Q)ToshibaMOSFET N-CH 250V 20A TO-220FL
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
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2SK2847(F)ToshibaMOSFET N-CH 900V 8A 2-16F1B
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2040pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 85W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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TPCF8103(TE85L,F)TPCF8103(TE85L,F)ToshibaMOSFET P-CH 20V 2.7A VS-8
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-8 (2-3U1A)
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TPC8110(TE12L,Q,M)ToshibaMOSFET P-CH 40V 8A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
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2SK4014(Q)ToshibaMOSFET N-CH 900V 6A SC-67
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 5400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1760pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-8 (2-3U1A)
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Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 440pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SJ412(Q)2SJ412(Q)ToshibaMOSFET P-CH 100V 16A TO-220FL
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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2SK2399(TE16L1,NQ)ToshibaMOSFET N-CH 100V 5A SC-64
Rds On (Max) @ Id, Vgs: 230 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK2744ToshibaMOSFET N-CH 50V 45A 2-16C1B
Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2782(TE16L1,Q)ToshibaMOSFET N-CH 60V 20A SC-64
Rds On (Max) @ Id, Vgs: 55 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 880pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount
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TPCA8019-H(TE12LQMToshibaMOSFET N-CH 30V 45A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 6150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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TPCA8023-H(TE12LQMToshibaMOSFET N-CH 30V 20A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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2SK3906(Q)ToshibaMOSFET N-CH 600V 20A SC-65
Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SJ619(TE24L,Q)ToshibaMOSFET P-CH 100V 16A SC-97
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount
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2SK2313(F)ToshibaMOSFET N-CH 60V 60A 2-16C1B
Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 5400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2845(TE16L1,Q)ToshibaMOSFET N-CH 900V 1A SC-64
Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount
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