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Discrete Semiconductor Products  ·  MOSFETs - Single
 

2SJ77 — MOSFET P-CH 160V 0.5A TO-220

ManufacturerRenesas Technology America
Drain to Source Voltage (Vdss)160V
Current - Continuous Drain (Id) @ 25° C500mA
Input Capacitance (Ciss) @ Vds120pF @ 10V
FET PolarityP-Channel
FET FeatureStandard
Power - Max30W
Mounting TypeThrough Hole
Package / CaseTO-220
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
RJK0353DSP-00#J0RJK0353DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0355DSP-00#J0RJK0355DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 12A 8-SOP
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2266N-EL-ERenesas Technology AmericaMOSFET N-CH 60V 30A LFPAKI
Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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RJK0355DPA-00#J0RJK0355DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 30A WPAK
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0364DPA-00#J0RJK0364DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 35A WPAK
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2164H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 60A 5LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0301DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 60A 5-LFPAK
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2165NRenesas Technology AmericaMOSFET N-CH 30V 55A LFPAKI
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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RJK0366DPA-00#J0RJK0366DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 25A WPAK
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1010pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0354DSP-00#J0RJK0354DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 16A 8-SOP
Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1740pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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FS70SM-06Renesas Technology AmericaMOSFET N-CH 60V 70A TO-3P
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 6540pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT1072HRenesas Technology AmericaMOSFET P-CH 30V 40A 5LFPAK
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 9500pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: 5LFPAK
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HAT2197R-EL-EHAT2197R-EL-ERenesas Technology AmericaMOSFET N-CH 30V 16A 8SOP
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 2650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0348DSP-00#J0RJK0348DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 22A 8-SOP
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2315TYTR-ERenesas Technology AmericaMOSFET N-CH 60V 2A 4-UPAK
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 173pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: UPAK
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RJK0390DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 65A W-PAK
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2160N-EL-ERenesas Technology AmericaMOSFET N-CH 20V 60A LFPAKI
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2197RHAT2197RRenesas Technology AmericaMOSFET N-CH 30V 16A 8-SOP
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 2650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2165N-EL-ERenesas Technology AmericaMOSFET N-CH 30V 55A LFPAKI
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2195RHAT2195RRenesas Technology AmericaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 3400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0332DPB-00#J0RJK0332DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 35A LFPAK
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0366DSP-00#J0RJK0366DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 11A 8-SOP
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1010pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK1058Renesas Technology AmericaMOSFET N-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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RJK03B9DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1110pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0394DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 35A W-PAK
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 2430pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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