2SJ650 — MOSFET P-CH 60V 12A TO-220ML
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
| 6LN04SS-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 0.2A SSFP Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 100mA, 4V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 26pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150mW · Mounting Type: Surface Mount | from 0,16 from 0,58 | Additional information Find at suppliers | |
| CPH6311-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 20V 5A CPH6 Rds On (Max) @ Id, Vgs: 42 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1230pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | from 0,39 from 0,97 | Additional information Find at suppliers | |
| ATP206-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 40V 40A ATPAK Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1630pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount | from 0,54 from 0,62 | Additional information Find at suppliers | |
| ATP213-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 50A ATPAK Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3150pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount | from 0,98 from 2,14 | Additional information Find at suppliers | |
| MCH5837-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH/DIODE SCHOTTKY MCPH5 Rds On (Max) @ Id, Vgs: 145 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.8nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 115pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 800mW · Mounting Type: Surface Mount | from 0,11 from 0,14 | Additional information Find at suppliers | |
| MCH6429-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 6A MCPH6 Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8.2nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 680pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | from 0,33 from 0,84 | Additional information Find at suppliers | |
| MCH6412-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 5A MCPH6 Rds On (Max) @ Id, Vgs: 41 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 790pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | from 0,33 from 0,84 | Additional information Find at suppliers | |
| CPH3348-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 12V 3A CPH3 Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 5.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 405pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | from 0,26 from 0,66 | Additional information Find at suppliers | |
| ECH8304-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 12V 9.5A ECH8 Rds On (Max) @ Id, Vgs: 16 mOhm @ 4.5A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 3180pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | from 0,43 from 0,99 | Additional information Find at suppliers | |
| 2SJ656 | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 18A TO-220ML Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 74nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 4200pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | from 0,96 from 2,20 | Additional information Find at suppliers | |
| CPH6411-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 6A CPH6 Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | from 0,29 from 0,35 | Additional information Find at suppliers | |
| ECH8306-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 2A ECH8 Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 1600pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | from 0,63 from 1,44 | Additional information Find at suppliers | |
| CPH6341-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 30V 5A CPH6 Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 430pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | from 0,30 from 0,75 | Additional information Find at suppliers | |
| ATP404-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 95A ATPAK Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 48A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 95A · Input Capacitance (Ciss) @ Vds: 6400pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 70W · Mounting Type: Surface Mount | from 1,39 from 3,05 | Additional information Find at suppliers | |
| 2SJ655 | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 12A TO-220ML Rds On (Max) @ Id, Vgs: 136 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2090pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | from 0,63 from 1,58 | Additional information Find at suppliers | |
| CPH3430-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 2A CPH3 Rds On (Max) @ Id, Vgs: 220 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 4.2nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 325pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | from 0,42 from 1,06 | Additional information Find at suppliers | |
| CPH3327-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 0.6A CPH3 Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 300mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 600mA · Input Capacitance (Ciss) @ Vds: 245pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | from 0,25 from 0,31 | Additional information Find at suppliers | |
| ECH8302-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 30V 7A ECH8 Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1400pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | from 0,26 from 0,32 | Additional information Find at suppliers | |
| SCH1301-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 12V 2.4A SCH6 Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.3A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 450pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount | from 0,39 from 0,97 | Additional information Find at suppliers | |
| FSS275-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH DUAL 60V 6A 8-SOP Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1100pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount | from 0,71 from 1,29 | Additional information Find at suppliers | |
| 2SK2632LS | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 800V 2.5A TO-220FI Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.3A, 15V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 550pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Through Hole | from 0,76 from 1,74 | Additional information Find at suppliers | |
| MCH3475-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 1.8A MCPH3 Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 88pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount | from 0,25 from 0,72 | Additional information Find at suppliers | |
| SCH2830-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH/DIODE SCHOTTKY SCH6 Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.5nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 115pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 600mW · Mounting Type: Surface Mount | from 0,30 from 0,75 | Additional information Find at suppliers | |
| 2SJ651 | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 60V 20A TO-220ML Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 2200pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | from 0,63 from 1,58 | Additional information Find at suppliers | |
| 2SK3709 | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 100V 37A TO-220ML Rds On (Max) @ Id, Vgs: 25 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 117nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 6250pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | from 1,74 from 3,67 | Additional information Find at suppliers |
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