Features

UNR111H — TRANS PNP W/RES 30 HFE M TYPE

Manufacturer: Panasonic - SSG  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 2.2K  •  Resistor - Emitter Base (R2) (Ohms): 10K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Frequency - Transition: 80MHz  •  Power - Max: 400mW  •  Transistor Type: PNP - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: M-Type
Datasheet

Suppliers of «UNR111H»

Part NoManufacturerPriceStock
Kontest, Moscow
+7 (495) 150-88-73, Fax: (495) 150-88-73, zakaz@kontest.ru
UNR111H (TRANS PNP W/RES 30 HFE M TYPE Подробнее)Panasonic - SSG