Features

GL4100E0000F — EMITTER IR 950NM 2.0MW TH

Manufacturer: Sharp Microelectronics  •  RoHS/pb-free: RoHS   Pb-free  •  Please note: Emitter Chip Change  •  Current - DC Forward (If): 100mA  •  Radiant Intensity (Ie) Min @ If: 1mW/sr @ 20mA  •  Wavelength: 950nm  •  Voltage - Forward (Vf) Typ: 1.2V  •  Viewing Angle: 180°  •  Orientation: Side View  •  Mounting Type: Through Hole  •  Package / Case: Radial  •  Other PartNo: 425-1938-5

Suppliers of «GL4100E0000F»

Part NoManufacturerPriceStock
Kontest, Moscow
+7 (495) 150-88-73, Fax: (495) 150-88-73, zakaz@kontest.ru
GL4100E0000F (EMITTER IR 950NM 2.0MW TH Подробнее)Sharp Microelectronics
"SINERGY-DISTRIBUTION" LLC, St. Petersburg
+7 (812) 409-49-13, sales@gsupply.ru
GL4100E0000F (EMITTER IR 950NM 50MA RADIAL)Sharp Microelectronics
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
GL4100E0000Ffrom 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
GL4100E0000Ffrom 7 days
CHIP DIGGER LIMITED, ShenZhen
(86) 13422897696, info@chipdigger.com
GL4100E0000F (EMITTER IR 950NM 50MA RADIAL)Sharp Microelectronics21055