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FQP17N08L — MOSFET N-CH 80V 16.5A TO-220

Manufacturer: Fairchild Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Series: QFET™  •  Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.25A, 10V  •  Drain to Source Voltage (Vdss): 80V  •  Gate Charge (Qg) @ Vgs: 11.5nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 16.5A  •  Input Capacitance (Ciss) @ Vds: 520pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 65W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 (Straight Leads)
Datasheet
Cross-referenceSTP22NE10L   Technical Specification »

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    ООО ВКС-ЭлектрониксFQP17N08LFairchild Semiconductor 2066
    NTK MostekFQP17N08L /ONS/ moq>782
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    Подробнее    		Fairchild Semiconductor
    "SINERGY-DISTRIBUTION" LLCFQP17N08L
    MOSFET N-CH 80V 16.5A TO-220    		ON Semiconductor
    FQP17N08L
    N-CHANNEL POWER MOSFET    		Rochester Electronics, LLC 2957
    ООО "Интегральные схемы"FQP17N08L from 7 days
    AspectFQP17N08L from 7 days


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    ООО ВКС-ЭлектрониксMoscow+7 (8499) 714-78-240  0 Hide
    "SINERGY-DISTRIBUTION" LLCSt. Petersburg+7 (812) 409-49-130  1 Hide
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