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  1. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3 ...

  2. MRF21060 Product details. 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs. Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts. 5 MHz Offset @ 4.096 MHz BW, 15 DTCH.

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  3. 2 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B (Minimum)

  4. 7 motorola rf device data mrf21060r3 mrf21060sr3 package dimensions case 465-06 issue f ni-780 mrf21060r3 notes: 1. dimensioning and tolerancing per ansi y14.5m−1994. 2. controlling dimen

  5. AGR21060EF RF Power Transistor from Qorvo RF Power Transistor, 2.11 to 2.17 GHz, 60 W, 14.5 dB, 28 V, LDMOS, Flange

  6. SKYA21060 RF and Microwave Switch from Skyworks Solutions, Inc. Min. Freq. MHz 400; Max. Freq. MHz 3800; Configuration SPST, SPDT, ... DP12T; datasheet, pricing ...

  7. 16868 Via Del Campo Court Suite 200, San Diego CA 92127