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Order today, ships today. FQI13N06TU – N-Channel 60 V 13A (Tc) 3.75W (Ta), 45W (Tc) Through Hole TO-262 (I2PAK) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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- QFET®
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FQT13N06. Description. This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
FQB13N06 / FQI13N06 ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
Part #: FQI13N06. Download. File Size: 672Kbytes. Page: 9 Pages. Description: 60V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
Overview. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power ...
FQD13N06L / FQU13N06L I — N-Channel QFET ® MOSFET www.onsemi.com 3 !ˆ˜ ˚ ˜˘ ˚ˆ ˘ˆ˜ 02468 10 0 2 4 6 8 10 12 V DS = 30V V DS = 48V ※ Note : I D V = 13.6A GS, Gat e
FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior ...