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FJL4315/D NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 MHz • High Voltage: VCEO = 250 V • Wide S.O.A. for Reliable Operation • Excellent Gain Linearity for Low THD • Complement to 2SA1943 / FJL4215 • Thermal and Electrical ...
Discrete & Power Modules. General Purpose and Low VCE (sat) Transistors. General Purpose and Low VCE (sat) Transistors | FJL4315. NPN Epitaxial Silicon Transistor. Similar Products. Products. Email Sales. Favorite. Datasheet.
15 Items. Order today, ships today. FJL4315OTU – Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 150 W Through Hole TO-264-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Onsemi
Description: Bipolar Transistors - BJT NPN Si Transistor Epitaxial. Datasheet: FJL4315OTU Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. In Stock: 8,847. Stock: 8,847 Can Ship Immediately. Factory Lead-Time: 68 Weeks.
- Onsemi / Fairchild
- Through Hole
- onsemi
- Bipolar Transistors-BJT
2SC5200/FJL4315. NPN Epitaxial Silicon Transistor. Applications. High-Fidelity Audio Output Amplifier. General Purpose Power Amplifier . Features. High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=230V. Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD.
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Features. High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=250V. Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available.
