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FDT439N. This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These products are well suited to low voltage, low current ...
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This N-Channel Enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook ...
PSMN4R3-30PL,127. MOSFET N-CH 30V 100A TO220AB. $1.76000. Details. See All. Order today, ships today. FDT439N – N-Channel 30 V 6.3A (Ta) 3W (Ta) Surface Mount SOT-223-4 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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View FDT439N by onsemi datasheet for technical specifications, dimensions and more at DigiKey. FDT439N by onsemi Datasheet | DigiKey Login or REGISTER Hello, {0} Account & Lists
Symbol Parameter FDT439N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±8V ID Drain Current - Continuous (Note 1a) 6.3 A - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 3W (Note 1b) 1.3 (Note 1c) 1.1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics
6 ns. Width: 3.5 mm. Part # Aliases: FDT439N_NL. Unit Weight: 112 mg. Select at least one checkbox above to show similar products in this category. Show Similar.
Symbol Parameter FDT439N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±8V ID Drain Current - Continuous (Note 1a) 6.3 A - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 3W (Note 1b) 1.3 (Note 1c) 1.1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics
