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  1. APT150GN120J. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient.

  2. APT150GN120J – IGBT Module Trench Field Stop Single 1200 V 215 A 625 W Chassis Mount ISOTOP® from Microchip Technology. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

    • Microchip Technology
  3. APT150GN120J Microchip Technology IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 150 A SOT-227 datasheet, inventory, & pricing.

    • Microchip Technology
    • IGBT Silicon Modules
    • Microchip
    • IGBT Modules
  4. View APT150GN120J by Microchip Technology datasheet for technical specifications, dimensions and more at DigiKey.

  5. www.microsemi.com › document-portal › doc_downloadAPT150GN120JDQ4 - Microsemi

    Gate. ) Dimensions in Millimeters and (Inches. APT150GN120JDQ4. 1200V, 150A, VCE(ON) = 3.2V Typical. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra. low VCE(ON)and are ideal for low frequency applications that require absolute minimum.

  6. APT150GN120J Product details. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS (ON) and Qg.

  7. www.microsemi.com › existing-parts › partsAPT150GN120J | Microsemi

    APT150GN120J (#74075) APT150GN120J (#74075) Product Status In Production. Overview ROHS: Package Carrier: Tube: Electrical Rating Symbol Min Typ Max Unit ...