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AM1214-250 STMicroelectronics Bipolar Transistors - BJT datasheet, inventory, & pricing.
- STMicroelectronics
- M259
- SMD/SMT
- Bipolar Transistors-BJT
The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry.
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Base Value Unit 786 W 21 A 70 V +250 °C -65 to +200 °C 0.21 °C/W 1/4, RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS, AM1214-250 Datasheet, PDF (1/4 Pages) STMicroelectronics, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors.
am1214-250 rf power transistors l-band radar applications • refractory /gold metallization • emitter site ballasting • low rf thermal resistance • input/output matching • overlay geometry • metal/ceramic hermetic package • pout = 300 w min. with 8.0 db gain • 1215-1400 mhz operation description the am1214-250 is a rugged, class ...
AM1214-250 Datasheet (PDF) - STMicroelectronics: Part # AM1214-250: Description: RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS: File Size 36.45 Kbytes : Html View 1 2 3 4
AM1214-250 STMicroelectronics Bipolar Transistors - BJT datasheet, inventory & pricing.