Ad
related to: sga 2463SGA-2463 - Request A Quote Online or Call Now! See Shippable Quantity Inventory for Part SGA-2463. Available Parts Ships Today!
Search Results
Qorvo's SGA2463Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.
The SGA2463Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F T and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.
The SGA-2463 is a high performance SiGe HBT MMIC Amplifier. Darlington configuration featuring 1 micron emitters provides high. FT and excellent thermal perfomance. The heterojunction in-. creases breakdown voltage and minimizes leakage current be-.
2 days ago · Description: RF Amplifier DC-5GHz SSG 17.1dB NF 3dB SiGe. Lifecycle: Obsolete. Datasheet: SGA2463Z Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. Stock: Specifications.
Stanford Microdevices’ SGA-2463 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive
The SGA-2463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction in-creases breakdown voltage and minimizes leakage current be-tween junctions. Cancellation of emitter junction non-linearities
The SGA-2463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.