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Specified Performance @ 520 MHz, 12.5 Volts Output Power 3 Watts Power Gain 11 dB Efficiency 55%. Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive. Excellent Thermal Stability Characterized with Series Equivalent Large-Signal. Impedance Parameters.
The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. Data Sheet. Documentation.
Order today, ships today. MRF1513NT1 – RF Mosfet 12.5 V 50 mA 520MHz 15dB 3W PLD-1.5 from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Related Products. Technical Inquiry. Delivery/ Return. Pricing Available Upon Request. Request a Pricing Quote. No Current Notices. Order MRF1513NT1 NXP at RFMW, Ltd. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry.
by mrf1513/d semiconductor technical data ˘ ˇ 520 mhz, 3 w, 12.5 v lateral n–channel broadband rf power mosfet case 466–02, style 1 pld–1.5 plastic
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET, MRF1513T1 Datasheet, MRF1513T1 circuit, MRF1513T1 data sheet : FREESCALE, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
by mrf1513/d semiconductor technical data 520 mhz, 3 w, 12.5 v lateral n–channel broadband rf power mosfet case 466–02, style 1 (pld–1.5) plastic motorola, inc. 2001 ˛ ˆ ’ tj–tc rθjc rev 2
