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  1. APT5010JLC Product details. POWER MOS VI™. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss.

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  2. Details, datasheet, quote on part number: APT5010JLC. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

    • Discrete
    • Download APT5010JLC Datasheet
    • Advanced Power Technology
    • APT5010JLC
  3. Request Advanced Power Technology APT5010JLC: online from Elcodis, view and download APT5010JLC pdf datasheet, Advanced Power Technology specifications.

  4. Apr 23, 2005 · APT5010JLC 500V 44A 0.100 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

  5. apt5010jll.pdf. APT5010JLL500V 44A 0.100 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS (ON)and Qg.

  6. Description: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS. Manufacturer: Advanced Power Technology.

  7. APT5010JLC: 500V, 44A power MOS VI transistor in 3-pin SOT-227 package. Operational temperature range from -55 ° C to 150 ° C. Datasheet *) APT5010JN: 500V, 48A power MOS IV transistor in 3-pin SOT-227 package. Operational temperature range from -55 ° C to 150 ° C. Datasheet *) APT5012JN: 500V, 43A power MOS IV transistor in 3-pin SOT-227 ...