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TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM, MTD8N06E datasheet pdf Motorola Download MTD8N06E datasheet from. Motorola, pdf
™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in ...
by MTD8N06E/D. MOTOROLA. SEMICONDUCTOR TECHNICAL DATA. © Motorola, Inc. 1997. MTD8N06E. TMOS POWER FET. 8.0 AMPERES. 60 VOLTS. RDS(on) = 0.12 OHM. ®. D. S. G.
Compare MTD8N06E by undefined vs IRF3710ZSPBF by undefined. View differences in part data attributes and features.
™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in ...
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MTD8N06E (ON) available from part suppliers worldwide on fipart - the premium aviation marketplace.
MTD8N06E · MOTOROLA-MTD8N06E Datasheet 185Kb / 10P, TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM. MTP8N50E · MOTOROLA-MTP8N50E Datasheet 158Kb / 6P ...
MTD8N06E · MOTOROLA-MTD8N06E Datasheet 185Kb / 10P, TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM. MTP8N50E · MOTOROLA-MTP8N50E Datasheet 158Kb / 6P ...