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The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. FEATURES INCLUDE: • High Gain. • Gold Metallization.
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DESCRIPTION: The . MRF5174. is a Common Emitter. Device Designed for Class A, AB and. C Amplifier Applications in the 225 to. 400 MHz Band. PACKAGE STYLE .280 4L STUD. A. 45° C. FEATURES INCLUDE: B E E. •. High Gain. •. Gold Metallization. •. Emitter Ballasting. B. E D C. J. I. F. MAXIMUM RATINGS. IC. 0.5 A. VCBO. 40 V. PDISS.
Last Updated : March 28, 2024 05:53 CST. MRF5174. Images are for reference only See Product Specifications. Share. Mouser No: 974-MRF5174. Mfr. No: MRF5174. Mfr.: Advanced Semiconductor, Inc. Customer No: Description: RF Bipolar Transistors RF Transistor. Datasheet: MRF5174 Datasheet (PDF) ECAD Model:
- Advanced Semiconductor, Inc.
MRF5174. MRF Transistors from P1dB. RF Power Transistor, 0.225 to 0.4 GHz, 2 W, 12 dB, 28 V, BiPolar, Stud. Status: Standard | Data Sheet: | RoHS Compliance: Specifications. Support Material. Related Products. Technical Inquiry. Delivery/ Return. Request a Pricing Quote.
MRF5174 Datasheet, Equivalent, Cross Reference Search. Type Designator: MRF5174. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 5 W. Maximum Collector-Base Voltage |Vcb|: 60 V. Maximum Collector-Emitter Voltage |Vce|: 33 V. Maximum Emitter-Base Voltage |Veb|: 4 V. Maximum Collector Current |Ic max|: 0.5 A
MRF5174 NPN RF Power Transistor . The is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the to 400 MHz Band.. High Gain Gold Metallization Emitter Ballasting. .
MRF5174 offered from PCB Electronics Supply Chain shipps same day. MRF5174, RF Bipolar Transistors, RF Bipolar Transistors RF Transistor
