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Dual Schottky Barrier Diode. These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features. Very Low Capacitance − Less Than 1.0 pF @ 0 V. Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA. AEC Qualified and PPAP Capable.
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MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode. These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features. Very Low Capacitance − Less Than 1.0 pF @ 0 V. Low Forward Voltage − 0.5 V (Typ) @ IF= 10 mA. AEC Qualified and PPAP Capable.
Order today, ships today. MMBD352WT1 – RF Diode Schottky - 1 Pair Series Connection 7V 200 mW SC-70-3 (SOT323) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- Obsolete
- Tape & Reel (TR)
5 days ago · Description: Schottky Diodes & Rectifiers SS SHKY DIO 7V TR. Datasheet: NSVMMBD352WT1G Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. In Stock: 2,613. Stock: 2,613 Can Ship Immediately. Factory Lead-Time: 8 Weeks.
MMBD352WT1 onsemi Diodes - General Purpose, Power, Switching 7V 225mW Dual datasheet, inventory & pricing.
Product Overview. Features. Very Low Capacitance - Less Than 1.0 pF @ Zero Volts. Low Forward Voltage - 0.5 Volts (Typ) @ I F = 10 mA. Pb-Free Package is Available. NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable. Material Composition. Product Change Notification
MMBD352WT1 onsemi Diodes - General Purpose, Power, Switching 7V 225mW Dual datasheet, inventory & pricing.
