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MBRS120T3/D Surface Mount Schottky Power Rectifier MBRS120T3G, SBRS8120T3G, SBRS8120N This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
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Order today, ships today. MBRS120T3 – Diode 20 V 1A Surface Mount SMB from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- DIODE SCHOTTKY 20V 1A SMB
- onsemi
- MBRS120T3OSTR-ND-Tape & Reel (TR)
- MBRS120T3
Guardring for Stress Protection Mechanical Characteristics: Case: Epoxy, Molded. Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable. Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds. Shipped in 12 mm Tape and Reel, 2500 units per reel.
MBRS120T3/D. LITERA TURE FULFILLMENT: Literature Distribution Center for ON Semiconductor. 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA. Phone: 303 ...
MBRS120T3/D MBRS120T3G, SBRS8120T3G Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
MBRS120T3 – Diode 20 V 1A Surface Mount SMB from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Login or REGISTER Hello, {0} Account & Lists
MBRS120T3 Product details. Surface Mount Schottky Power Rectifier. This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or ...