This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features.
Specifications ; Vrrm - Repetitive Reverse Voltage: 20 V ; Vf - Forward Voltage: 600 mV ; Ifsm - Forward Surge Current: 40 A ; Ir - Reverse Current: 1 mA.
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features.
Schottky Power Rectifier. Surface Mount Power Package. Employs the Schottky Barrier principle in a large area metal-to-silicon power diode.
MBRS120T3. Preferred Device. Surface Mount. Schottky Power Rectifier ...employing ... MBRS120T3. SMB. 2500/Tape & Reel. SCHOTTKY BARRIER. RECTIFIER. 1.0 AMPERE.
In stock
MBRS120T3. Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon. Due ... MBRS120T3 DERF ID #: 436022. Manufacturer: –. VOLTAGE: 20V V(RRM) AMPS: 1A ...