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KTA1271: 230Kb / 2P: EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) Tiger Electronic Co.,Lt... KTA1271: 102Kb / 1P: TO-92 Plastic-Encapsulate Transistors (PNP) KEC(Korea Electronics) KTA1271: 74Kb / 2P: EPITAXIAL PLANAR PNP TRANSISTOR Foshan Blue Rocket Elec... KTA1271: 1Mb / 6P: Silicon PNP transistor in a TO-92 Plastic Package Jiangsu ...
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KTA1271-Y-AT/P KEC Semicon $0.0593 - 30V 625mW 100@100mA,1V 800mA TO-92-3 Bipolar Transistors - BJT ROHS datasheet, price, inventory C112811
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- KTA1271-Y-AT/P
KTA1271 Datasheet, Equivalent, Cross Reference Search Type Designator: KTA1271 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.625 W Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Collector Current |Ic max|: 0.8 A Max. Operating Junction Temperature (Tj): 175 °C
KTA1271 Datasheet (HTML) - Tiger Electronic Co.,Ltd: KTA1271 Product details: TRANSISTOR (PNP) FEATURES High DC Current Gain Complementary to KTC3203.
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The KTA1271 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Here is an image showing the pin diagram of this transistor.
The KTA1271-Y from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Emitter Cut off Current -0.1 µA, Collector Base Voltage -35 V, Collector Cut off Current -0.1 µA, Collector Emitter Breakdown Voltage -30 V. Tags: Through Hole, PNP Transistor. More details for KTA1271-Y can be seen below.
Product-Rank KTA1271-O KTA1271-Y Range 100~200 160~320 ABSOLUTE MAXIMUM RATINGS (T A=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO-35 V Collector to Emitter Voltage VCEO-30 V Emitter to Base Voltage VEBO-5 V Collector Current - Continuous IC-800 mA
