Search Results
IRFZ44NS. Overview. IR MOSFET 55 V in a D²PAK package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS , lighting, load switches as well as battery powered applications. Benefits.
IRFZ44NS Product details. GENERAL DESCRIPTION. N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
- IRFZ44NS Download
- 8 Pages
- 70.53 Kbytes
- IRFZ44NS
IRFZ44NS Product details. Description. Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known.
- IRFZ44NS Download
- 10 Pages
- 151.95 Kbytes
- IRFZ44NS
Order today, ships today. IRFZ44NSTRLPBF – N-Channel 55 V 49A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Infineon Technologies
IRFZ44 www.vishay.com Vishay Siliconix S21-1045-Rev. C, 25-Oct-2021 6 Document Number: 91291 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
- 787KB
- 9
Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated. Description. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Description. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
