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  1. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and ...

  2. IRFIZ44NPBF – N-Channel 55 V 31A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

    • Infineon Technologies
    • IRFIZ44NPBF-ND
    • MOSFET N-CH 55V 31A TO220AB FP
    • Infineon Technologies
  3. IRFZ44NPbF. HEXFET® Power MOSFET. D. G. S. VDSS = 55V. RDS(on) = 17.5m Ω. ID = 49A. TO-220AB. Absolute Maximum Ratings. Thermal Resistance. www.irf.com. 1. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics. Repetitive rating; pulse width limited by max. junction temperature.

  4. 1 day ago · IRFZ44NPBF Infineon Technologies MOSFET MOSFT 55V 49A 17.5mOhm 42nC datasheet, inventory, & pricing.

    • Infineon Technologies
  5. View IRFIZ44NPbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

  6. 55V Single N-Channel Power MOSFET in a TO-220 FullPak package.

  7. Infineon IRFIZ44NPBF technical specifications, attributes, and parameters. MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de. Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP. 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS.