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  1. IKW15T120 TrenchStop® Series IFAG IPC TD VLS 3 Rev. 2.4 12.06.2013 Dynamic Characteristic Input capacitance Ciss VCE=25V, VGE=0V, f=1MHz - 1100 - pF Output capacitance Coss - 100 - Reverse transfer capacitance Crss - 50 - Gate charge QGate VCC=960V, IC=15A VGE=15V - 85 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 ...

  2. 726-IKW15T120 726-IKW15N120CS7XKSA Mfr.'s Part #: IKW15T120: IKW15N120CS7XKSA1: Manufacturer: Infineon Technologies: Infineon Technologies: Description: IGBT Transistors LOW LOSS DuoPack 1200V 15A IGBT Transistors INDUSTRY 14 Lifecycle: End of Life

    • Infineon
    • Si
    • IGBT Transistors
  3. IKW15N120T2. Overview. 1200 V, 15 A IGBT discrete with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 15 A TRENCHSTOP™ 2 IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept.

  4. Apr 13, 2024 · IKW15T120 E8161 Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 15A datasheet, inventory, & pricing.

    • Infineon
    • Si
    • IGBT Transistors
  5. IKW15T120. TrenchStop ®Series. IFAG IP C TD VLS 1 Rev. 2.4 12.06.2013. Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology with soft, fast recovery anti-p arallel Emi tter Controll ed HE diode. Approx. 1.0V reduced VCE (sat) and 0.5 V reduced V F com pared to B UP313D. Short circuit withstand time – 10 s.

  6. 448-IKW15T120FKSA1. 2156-IKW15T120FKSA1. IKW15T120. Standard Package. 30. Order today, ships today. IKW15T120FKSA1 – IGBT NPT, Trench Field Stop 1200 V 30 A 110 W Through Hole PG-TO247-3-1 from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

  7. IGBT Discretes. IKW15N120CS7. IKW15N120CS7. Overview. 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 15 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low V CEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast ...