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  1. GA200TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case - IGBT —0.20 RθJC Thermal Resistance, Junction-to-Case - Diode —0.35 °C/W RθCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink ...

  2. GA200TS60U Product details. HALF-BRIDGE IGBT INT-A-PAK. Ultra-Fast Speed IGBT. Features. • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode. • Very low conduction and switching losses. • HEXFRED™antiparallel diodes with ultra-soft recovery. • Industry standard package. • UL approved. Benefits.

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  3. View and download the latest International Rectifier GA200TS60U Transistors PDF Datasheet including technical specifications.

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  4. FEATURES. • Generation 4 IGBT technology. • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant. mode. • Very low conduction and switching losses. • HEXFRED® antiparallel diodes with ultrasoft recovery. • Industry standard package. • UL approved file E78996.

  5. GA200TS60U HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT - International Rectifier; GA200TS60UPBF IGBT - Vishay Siliconix; GA200TS60UX Ultra-FastTM Speed IGBT - International Rectifier

  6. GA200TS60U datasheet, GA200TS60U pdf, GA200TS60U data sheet, datasheet, data sheet, pdf, International Rectifier, 600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

  7. GA200TS60U Datasheet (PDF) - International Rectifier If the datasheet does not displayed, please, download the Adobe Reader or click to view in HTML datasheet. Similar Part No. - GA200TS60U