Search Results
FQD6P25 / FQU6P25. Rev. A 1, October 2008. Dimensions in Millimeters. Mechanical Dimensions. D - P AK ©200 8 Fairchild Semiconductor International. FQD6P25 / FQU6P25.
FQD6P25 / FQU6P25 G!!!!! FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
8541.29.0095. Additional Resources. Attribute. Description. Standard Package. 2,000. Order today, ships today. FQD6P25TF – P-Channel 250 V 4.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
250V P-Channel MOSFET, FQU6P25 Datasheet, FQU6P25 circuit, FQU6P25 data sheet : FAIRCHILD, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
FQD6P25 / FQU6P25 April 2000 QFET FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
FQU6P25 250V P-channel QFET . These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
