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Product Overview. Applications. Switched Mode Power Supplies. Audio Amplifiers. DC Motor Control. Variable Switching Power Applications. Features. 1.6 A, 500 V, R DS (on) = 5.3 Ω (Max.) @ V GS = 10 V, I D = 0.8 A. Low Gate Charge (Typ. 6.0 nC) Low Crss (Typ. 4.3 pF) Fast Switching. 100% Avalanche Tested. Improved dv/dt Capability.
FQU2N50B. N-Channel QFET® MOSFET. 500 V, 1.6 A, 5.3 Ω . Description. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
Features. • 1.6A, 500V, R DS (on) = 5.3Ω @VGS = 10 V. • Low gate charge ( typical 6. 0 nC) • Low Crss ( typical 4.0 pF) • Fast switching. • 100% avalanche tested. • Improved dv/dt capability. !" " ! " " S. D. G. I-PAK. FQU S eries.
Features. 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A. Low Gate Charge (Typ. 6.0 nC) Low Crss (Typ. 4.3 pF) Fast Switching. 100% Avalanche Tested. Improved dv/dt Capability. I-PAK. D. G. S. Absolute Maximum Ratings. TC = 25oC unless otherwise noted. Thermal Characteristics. Package Marking and Ordering Information.
FQD2N50B / FQU2N50B (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, May 2000 Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 85mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.1A, di/dt ≤ 200A/µs, VDD ≤ BVDSS ...
Description. isc N-Channel MOSFET Transistor. FQU2N50B Datasheet (HTML) - Inchange Semiconductor Company Limited. FQU2N50B Product details. FEATURES. ·Drain Current -ID=1.6A@ TC=25℃. ·Drain Source Voltage -VDSS=500V (Min) ·Static Drain-Source On-Resistance. -RDS (on) =5.3Ω (Max)@VGS= 10V. DESCRIPTION. ·Motor drive, DC-DC converter, power switch.
onsemi's FQU2N50B is a trans mosfet n-ch 500v 1.6a 3-pin(3+tab) ipak. in the fet transistors, mosfets category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.