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FQPF7N65C. N-Channel QFET® MOSFET. 650 V, 7 A, 1.4 Ω. August 2013. Description. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Product Overview. Applications. LCD TV. LED TV. Features. 7A, 650V, R DS (on) = 1.4Ω (Max.) @V GS = 10 V, I D = 3.5A. Low gate charge ( Typ. 28nC) Low C rss ( Typ. 12pF) 100% avalanche tested. Material Composition. Product Change Notification. Product List. If you wish to buy products or product samples, please log in to your onsemi account.
FQPF7N65C – N-Channel 650 V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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Description. 650V N-Channel MOSFET. FQPF7N65C Datasheet (HTML) - Fairchild Semiconductor. FQPF7N65C Product details. General Description. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Repetitive Rating : Pulse width limited by maximum junction temperature. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. Essentially independent of operating temperature.
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