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Product Overview. Applications. Other Audio & Video. Other Industrial. Features. 6A, 900V, R DS (on) = 2.3Ω (Max.) @V GS = 10 V, I D = 3A. Low gate charge ( Typ. 30nC) Low C rss ( Typ. 11pF) 100% avalanche tested. Material Composition. Product Change Notification. Product List.
ONSEMI. Single N-channel MOSFET in a 5mm x 6mm LFPAK package designed for compact and efficient designs. Delivers -30V drain-to-source voltage, 2.7mΩ on-resistance at 10V, and 164A drain/standby current. Features a 177A continuous drain current, 2.8mΩ at 10V R DS (ON), and 100V drain-to-source voltage.
- onsemi
- MOSFET
FQPF6N90C – N-Channel 900 V 6A (Tc) 56W (Tc) Through Hole TO-220F-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Description. 900V N-Channel MOSFET. FQPF6N90C Datasheet (HTML) - Fairchild Semiconductor. FQPF6N90C Product details. Description. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
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Max. Unit. Off Characteristics. On Characteristics. Switching Characteristics. Drain-Source Diode Characteristics and Maximum Ratings. Notes: Repetitive rating : pulse-width limited by maximum junction temperature. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. ISD ≤ 6 A, di/dt ≤ 200 A/μs , VDD ≤ BVDSS, starting TJ = 25°C.
Description: MOSFET 900V N-Ch Q-FET advance C-Series. Lifecycle: Obsolete. Datasheet: FQPF6N90C Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model. Compare Product. Add To Project | Add Notes. Availability. Stock: Not Available. Specifications.
FQP6N90C / FQPF6N90C Rev. C1 2 www.fairchildsemi.com FQP6N90C / FQPF6N90C — N-Channel QFET ® MOSFET Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. I SD ≤ 6 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.