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FQP50N06 Product details. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche ...
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These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Order today, ships today. FQP50N06 – N-Channel 60 V 50A (Tc) 120W (Tc) Through Hole TO-220-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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FQP50N06 ©2003 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting T J = 25°C 4.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP50N06 onsemi / Fairchild MOSFET TO-220 N-CH 60V 50A datasheet, inventory, & pricing.
FQP50N06L — N-Channel QFET ® MOSFET ©2001 Fairchild Semiconductor Corporation FQP50N06L Rev. C1 4 www.fairchildsemi.com Typical Characteristics (continued) 10-5 10-4 10-3 10-2 10-1 100 101
