FQP50N06. Units. VDSS. Drain-Source Voltage. 60. V. ID. Drain Current. - Continuous (TC = 25°C). 50. A. - Continuous (TC = 100°C). 35.4. A. IDM. Drain Current.
Overview. These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.
FQP50N06 MOSFET. Datasheet pdf. Equivalent. Type Designator: FQP50N06 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...