Order today, ships today. FQI7P06TU – P-Channel 60 V 7A (Tc) 3.75W (Ta), 45W (Tc) Through Hole TO-262 (I2PAK) from Fairchild Semiconductor.
FQI7P06TU ; Package: I2PAK(TO-262) ; Description: 60V 7A 410mΩ@3.5A,10V P Channel I2PAK(TO-262) MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type ...
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...
... FQI7P06TU datasheet. FQI7P06TU manufactured by: Fairchild Semiconductor, 60V P-Channel QFET Others with the same file for datasheet: FQB7P06TM · FQI7P06TU ...
FQI7P06TU Features -7A, -60V, RDS(on) = 0.41Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche.
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The FQI7P06TU is parts of the Single FETs, MOSFETs in Obsolete This part number works in temperatures from -55°C ~ 175°C (TJ). The FQI7P06TU is designed for ...
Details, datasheet, quote on part number: FQI7P06TU ; Mounting Type, Through Hole ; FET Type, MOSFET P-Channel, Metal Oxide ; Drain to Source Voltage (Vdss), 60V.
If you're in search of some available FQI7P06TU made by FAIRCHILD, then you're in the right place! 1-Source is a global, stocking distributor of components ...
Technical Specifications ; Drain to Source Resistance, 26 mΩ ; Drain to Source Voltage (Vdss), 60 V ; Element Configuration, Single ; Fall Time, 195 ns.