These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...

Hot Selling Electronic Components FQI7P06 In Stock hot ; Customizations. Customized logo. 100000 pieces(MOQ) ; Lead time. 3 days. 1+ pieces. To be negotiated.

TM Features -7A, -60V, RDS(on) = 0.41Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv ...

FQI7P06 ; Item No.: · Part number: FQI7P06 Package: TO-262(I2 Brand: FAIRC CONTACT US FOR PRICES AND MORE INFORMATION ; In Stock : 9552 ; Part Number · FQI7P06

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

Specifications ; Vds - Drain-Source Breakdown Voltage: 60 V ; Id - Continuous Drain Current: 7 A ; Rds On - Drain-Source Resistance: 410 mOhms ; Vgs - Gate-Source ...

FQB7P06 / FQI7P06. ©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001. FQB7P06 / FQI7P06. 60V P-Channel MOSFET. General Description. These P-Channel ...

Symbol elementu: FQI7P06. Opis: 60V P-Channel QFET. Pobierz: FQI7P06.pdf. Rozmiar pliku: 662 KB / 9 stron. Producent: Fairchild.