These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, ...

FQB4P40, FQI4P40 Datasheet by onsemi ; BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-400 -- -- V ; ∆BVDSS ; / ∆TJ ; Breakdown · Temperature.

Part #: FQI4P40. Download. File Size: 647Kbytes. Page: 9 Pages. Description: 400V P-Channel MOSFET. Manufacturer: Fairchild Semiconductor.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...

These devices are well suited for electronic lamp ballast based on complimentary half bridge. TM Features -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate ...

FQI4P40TU MOSFET. Datasheet pdf. Equivalent. Type Designator: FQI4P40TU. Type of Transistor: MOSFET. Type of Control Channel: P -Channel.

FQI4P40 Fairchild are new and original and in stock for sale with 180 days warranty! view product specifications of Integrated Circuits (ICs) and datasheet ...

FQI4P40 ; Item No.: · Part number: FQI4P40 Package: TO-262. Brand: FAIRCHILD CONTACT US FOR PRICES AND MORE INFORMATION ; In Stock : 9375 ; Part Number · FQI4P40

Specifications ; Transistor Polarity: P-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 400 V ; Id - Continuous Drain Current: 3.5 A.