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  1. Part #: FQI13N50. Download. File Size: 624Kbytes. Page: 9 Pages. Description: 500V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.

  2. Product Attributes. Report Product Information Error. View Similar. Documents & Media. Environmental & Export Classifications. Substitutes (2) Additional Resources. Order today, ships today. FQI13N50CTU – N-Channel 500 V 13A (Tc) 195W (Tc) Through Hole TO-262 (I2PAK) from onsemi.

    • onsemi
    • QFET®
    • Tube
  3. 500V N-Channel MOSFET, FQI13N50 Datasheet, FQI13N50 circuit, FQI13N50 data sheet : FAIRCHILD, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

  4. Description. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

  5. www.onsemi.com › products › discrete-power-modulesFQP13N50 - onsemi

    Overview. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power ...

  6. FQI13N50 500V N-channel Mosfet . These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching

  7. Technical Specifications. Power Field Effect Transistors (FET) FQI13N50C attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi. Package Body Material: PLASTIC/EPOXY. Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED. Configuration: SINGLE WITH BUILT-IN DIODE. Transistor Element Material: SILICON.