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Features a 177A continuous drain current, 2.8mΩ at 10V RDS(ON), and 100V drain-to-source voltage.
FQE10N20CTU ; Input Capacitance (Ciss) (Max) @ Vds. 510 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 12.8W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
Order today, ships today. FQE10N20CTU – N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3 from Fairchild Semiconductor. Pricing and Availability on ...
4A, 200V, 0.36ohm, N-Channel Power MOSFET.
FQE10N20CTU ; Description: 200V 4A 360mΩ@2A,10V 12.8W N Channel TO-126 MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: SMT Assembly. A PCB ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
FQE10N20CTU Datasheet pdf - 200V N-Channel Advance Q-FET C ...
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200V N-Channel Advance Q-FET C-Series, FQE10N20CTU datasheet pdf Fairchild Semiconductor Download FQE10N20CTU datasheet from. Fairchild Semiconductor, pdf
FQE10N20CTU MOSFET. Datasheet pdf. Equivalent. Type Designator: FQE10N20CTU Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Part No. FQE10N20C FQE10N20CTU ; Description, 200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET ; File Size, 625.22K / 8 Page ; Maker, FAIRCHILD[ ...
