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  1. www.onsemi.com › mosfets › fqd7n30FQD7N30 - onsemi

    Overview. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

  2. Order today, ships today. FQD7N30TM – N-Channel 300 V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

    • onsemi
    • QFET®
    • Tape & Reel (TR)
  3. Description. This produced stripe technology resistance, and suitable factor. Absolute. 1/8" from Case for 5 Seconds. Thermal Characteristics. Package Marking and Ordering Information. Electrical Characteristics. TC = 25°C unless otherwise noted. . . Max. μ. Notes: FQD7N30 — N-Channel QFET MOSFET®. Ω. FQD7N30 — N-Channel QFET MOSFET®.

  4. Part #: FQD7N30. Download. File Size: 758Kbytes. Page: 9 Pages. Description: 300V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.

    • FQD7N30 Download
    • 9 Pages
    • 758.6 Kbytes
    • FQD7N30
  5. FQD7N30 Power MOSFET, N-Channel, QFET®, 300 V, 5.5 A, 700 mΩ, DPAK Product Overview For complete documentation, see the data sheet. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This

  6. 5.5 A. Rds On - Drain-Source Resistance: 700 mOhms. Vgs - Gate-Source Voltage: - 30 V, + 30 V. Vgs th - Gate-Source Threshold Voltage: 3 V. Qg - Gate Charge: 17 nC.

  7. N-Channel QFET® MOSFET. 300 V, 5.5 A, 700 mΩ. Description. This produced stripe technology resistance, and suitable factor. Absolute. November 2013. 1/8" from Case for 5 Seconds. Thermal Characteristics. Package Marking and Ordering Information. FQD7N30 — N-Channel QFET MOSFET®. Ω. FQD7N30 — N-Channel QFET MOSFET®.