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FQA6N90 – N-Channel 900 V 6.4A (Tc) 198W (Tc) Through Hole TO-3P from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- QFET®
- Tube
3 days ago · 1 Channel. Vds - Drain-Source Breakdown Voltage: 900 V. Id - Continuous Drain Current: 6.4 A. Rds On - Drain-Source Resistance: 1.9 Ohms. Vgs - Gate-Source Voltage: - 30 V, + 30 V.
- onsemi
- MOSFET
- Through Hole
FQA6N90_F109 Rev. FQA6N90_F109 900V N-Channel MOSFET. Package Marking and Ordering Information. Electrical Characteristics TC = 25°C unless otherwise noted. NOTES: 1. Repetitive Rating : Pulse wid th limited by maximum junction temperature. 2. L = 33mH, I AS =6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.
Electrical Characteristics . TC = 25°C unless otherwise noted. NOTES: Repetitive Rating : Pulse width limited by maximum junction temperature. L = 33mH, IAS =6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. ISD ≤5.8A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C . Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Order today, ships today. FQA6N90_F109 – N-Channel 900 V 6.4A (Tc) 198W (Tc) Through Hole TO-3P from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
View datasheets for FQA6N90_F109 by ON Semiconductor and other related components here.
Jul 31, 2023 · FQA6N90 onsemi / Fairchild MOSFET 900V N-Channel QFET datasheet, inventory & pricing.