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FQA13N80-F109. Description. This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
6 days ago · 800 V. Id - Continuous Drain Current: 12.6 A. Rds On - Drain-Source Resistance: 750 mOhms. Vgs - Gate-Source Voltage: - 30 V, + 30 V. Minimum Operating Temperature: - 55 C.
- onsemi
- Si
- MOSFET
Overview. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Order today, ships today. FQA13N80 – N-Channel 800 V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- QFET®
- Tube
FQA13N80 – N-Channel 800 V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN from Fairchild Semiconductor. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- MOSFET N-CH 800V 12.6A TO3PN
- Fairchild Semiconductor
- 2156-FQA13N80-FS-ND
- FQA13N80
View FQA13N80 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
General Description. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and ...
