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  1. Part #: FPD10000AF. Download. File Size: 185Kbytes. Page: 3 Pages. Description: 10W PACKAGED POWER PHEMT. Manufacturer: Filtronic Compound Semiconductors.

  2. PRELIMINARY • PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.8GHz DESCRIPTION AND ...

  3. FPD10000AF 1W Power Phemt FEATURES (1.8 GHz) 31 dBm Linear Output Power 16 dB Power Gain Useable Gain to 10 GHz 41 dBm Output IP3 Maximum Stable Gain dB 50% Power-Added Efficiency 10V Operation / Plated Source Thru-Vias. DIE SIZE (µm): x 800 DIE THICKNESS: 75µm BONDING

  4. 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS, FPD10000V Datasheet, FPD10000V circuit, FPD10000V data sheet : FILTRONIC, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

  5. Buy FPD10000AF by FILTRONIC COMPOUND SEMICONDUCTOR. Find best pricing, stock from factory direct or authorized sources. Immediate delivery, traceability, 3-yr warranty.

  6. Buy FPD10000AF by Qorvo, Inc. Find best pricing, stock from factory direct or authorized sources. Immediate delivery, traceability, 3-yr warranty.

  7. The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-